Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
39 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
270 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
15.94mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.02mm
Transistor Material
Si
Height
20.95mm
País de Origem
China
Detalhes do produto
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
R$ 100,72
R$ 100,72 Each (Sem VAT)
1
R$ 100,72
R$ 100,72 Each (Sem VAT)
1
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
Quantidade | Preço unitário |
---|---|
1 - 9 | R$ 100,72 |
10 - 49 | R$ 84,37 |
50 - 99 | R$ 78,11 |
100 - 199 | R$ 77,32 |
200+ | R$ 76,75 |
Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
39 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
270 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
15.94mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.02mm
Transistor Material
Si
Height
20.95mm
País de Origem
China
Detalhes do produto