N-Channel MOSFET, 19 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIR462DP-T1-GE3

Nº de Estoque RS: 710-3402Marca: VishayPart Number: SIR462DP-T1-GE3
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Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

4.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

20 nC @ 10 V, 8.8 nC @ 4.5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

4.9mm

Width

5.89mm

Minimum Operating Temperature

-55 °C

Height

1.04mm

País de Origem

China

Detalhes do produto

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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R$ 16,28

Each (In a Pack of 5) (Sem VAT)

N-Channel MOSFET, 19 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIR462DP-T1-GE3
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R$ 16,28

Each (In a Pack of 5) (Sem VAT)

N-Channel MOSFET, 19 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIR462DP-T1-GE3
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Comprar em grandes quantidades

QuantidadePreço unitárioPer Pacote
5 - 45R$ 16,28R$ 81,40
50 - 245R$ 15,74R$ 78,70
250 - 495R$ 11,76R$ 58,80
500 - 1245R$ 11,09R$ 55,45
1250+R$ 10,02R$ 50,10

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

4.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

20 nC @ 10 V, 8.8 nC @ 4.5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

4.9mm

Width

5.89mm

Minimum Operating Temperature

-55 °C

Height

1.04mm

País de Origem

China

Detalhes do produto

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more