N-Channel MOSFET, 65 A, 100 V, 8-Pin PowerPAK SO-8 Vishay SIR668DP-T1-RE3
Documentos Técnicos
Especificações
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
100 V
Series
TrenchFET
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5.05 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.26mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.25mm
Typical Gate Charge @ Vgs
72 nC @ 10 V
Height
1.12mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Detalhes do produto
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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R$ 30,70
Each (In a Pack of 2) (Sem VAT)
Padrão
2
R$ 30,70
Each (In a Pack of 2) (Sem VAT)
Padrão
2
Comprar em grandes quantidades
| Quantidade | Preço unitário | Per Pacote |
|---|---|---|
| 2 - 18 | R$ 30,70 | R$ 61,40 |
| 20 - 98 | R$ 26,50 | R$ 53,00 |
| 100 - 198 | R$ 23,42 | R$ 46,84 |
| 200 - 498 | R$ 19,56 | R$ 39,12 |
| 500+ | R$ 18,41 | R$ 36,82 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificações
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
100 V
Series
TrenchFET
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5.05 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.26mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.25mm
Typical Gate Charge @ Vgs
72 nC @ 10 V
Height
1.12mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Detalhes do produto
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products