N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIRA90DP-T1-RE3
Documentos Técnicos
Especificações
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Width
5.26mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.25mm
Typical Gate Charge @ Vgs
102 nC @ 10 V
Height
1.12mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Detalhes do produto
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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R$ 26,60
Each (In a Pack of 5) (Sem VAT)
Padrão
5
R$ 26,60
Each (In a Pack of 5) (Sem VAT)
Padrão
5
Comprar em grandes quantidades
| Quantidade | Preço unitário | Per Pacote |
|---|---|---|
| 5 - 45 | R$ 26,60 | R$ 133,00 |
| 50 - 120 | R$ 22,96 | R$ 114,80 |
| 125 - 245 | R$ 21,92 | R$ 109,60 |
| 250 - 495 | R$ 20,87 | R$ 104,35 |
| 500+ | R$ 19,78 | R$ 98,90 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificações
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Width
5.26mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.25mm
Typical Gate Charge @ Vgs
102 nC @ 10 V
Height
1.12mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Detalhes do produto
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products