Documentos Técnicos
Especificações
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
5.3 A
Maximum Drain Source Voltage
1700 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
78 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +25 V
Width
10.99mm
Transistor Material
SiC
Number of Elements per Chip
1
Length
10.23mm
Typical Gate Charge @ Vgs
13 nC @ 20 V
Maximum Operating Temperature
+150 °C
Height
4.57mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
3.8V
País de Origem
China
Detalhes do produto
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
MOSFET Transistors, Wolfspeed
R$ 338,38
R$ 169,19 Each (In a Pack of 2) (Sem VAT)
Padrão
2
R$ 338,38
R$ 169,19 Each (In a Pack of 2) (Sem VAT)
Padrão
2
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
Quantidade | Preço unitário | Per Pacote |
---|---|---|
2 - 8 | R$ 169,19 | R$ 338,38 |
10 - 18 | R$ 161,18 | R$ 322,36 |
20 - 48 | R$ 159,62 | R$ 319,24 |
50 - 98 | R$ 157,75 | R$ 315,50 |
100+ | R$ 155,57 | R$ 311,14 |
Documentos Técnicos
Especificações
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
5.3 A
Maximum Drain Source Voltage
1700 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
78 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +25 V
Width
10.99mm
Transistor Material
SiC
Number of Elements per Chip
1
Length
10.23mm
Typical Gate Charge @ Vgs
13 nC @ 20 V
Maximum Operating Temperature
+150 °C
Height
4.57mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
3.8V
País de Origem
China
Detalhes do produto
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.