SiC N-Channel MOSFET, 35 A, 1000 V, 4-Pin TO-247-4 Wolfspeed C3M0065100K

Nº de Estoque RS: 125-3453Marca: WolfspeedPart Number: C3M0065100K
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

1000 V

Package Type

TO-247-4

Series

C3M

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

113.5 W

Maximum Gate Source Voltage

-8 V, +19 V

Maximum Operating Temperature

+150 °C

Length

16.13mm

Typical Gate Charge @ Vgs

35 nC @ 15 V, 35 nC @ 4 V

Width

5.21mm

Transistor Material

SiC

Number of Elements per Chip

1

Forward Diode Voltage

4.8V

Height

23.6mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

Silicon Carbide Power MOSFET, C3M Series, Cree Inc.

MOSFET Transistors, Cree Inc.

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R$ 307,03

Each (Sem VAT)

SiC N-Channel MOSFET, 35 A, 1000 V, 4-Pin TO-247-4 Wolfspeed C3M0065100K
Selecione o tipo de embalagem

R$ 307,03

Each (Sem VAT)

SiC N-Channel MOSFET, 35 A, 1000 V, 4-Pin TO-247-4 Wolfspeed C3M0065100K
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

1000 V

Package Type

TO-247-4

Series

C3M

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

113.5 W

Maximum Gate Source Voltage

-8 V, +19 V

Maximum Operating Temperature

+150 °C

Length

16.13mm

Typical Gate Charge @ Vgs

35 nC @ 15 V, 35 nC @ 4 V

Width

5.21mm

Transistor Material

SiC

Number of Elements per Chip

1

Forward Diode Voltage

4.8V

Height

23.6mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

Silicon Carbide Power MOSFET, C3M Series, Cree Inc.

MOSFET Transistors, Cree Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more