Diodes Inc N-Channel MOSFET, 4 A, 20 V, 3-Pin SOT-23 ZXMN2F34FHTA

Nº de Estoque RS: 122-0604Marca: DiodesZetexPart Number: ZXMN2F34FHTA
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

1.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

1

Width

1.4mm

Length

3.04mm

Typical Gate Charge @ Vgs

2.8 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.12mm

País de Origem

Germany

Detalhes do produto

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Informações de estoque temporariamente indisponíveis.

R$ 9.780,00

R$ 3,26 Each (On a Reel of 3000) (Sem VAT)

Diodes Inc N-Channel MOSFET, 4 A, 20 V, 3-Pin SOT-23 ZXMN2F34FHTA

R$ 9.780,00

R$ 3,26 Each (On a Reel of 3000) (Sem VAT)

Diodes Inc N-Channel MOSFET, 4 A, 20 V, 3-Pin SOT-23 ZXMN2F34FHTA
Informações de estoque temporariamente indisponíveis.

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

1.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

1

Width

1.4mm

Length

3.04mm

Typical Gate Charge @ Vgs

2.8 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.12mm

País de Origem

Germany

Detalhes do produto

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more