Infineon SIPMOS® P-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 SPP80P06PHXKSA1
Documentos Técnicos
Especificações
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
60 V
Series
SIPMOS®
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
340 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10.36mm
Typical Gate Charge @ Vgs
115 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
4.57mm
Transistor Material
Si
Forward Diode Voltage
1.6V
Height
15.95mm
Minimum Operating Temperature
-55 °C
País de Origem
Malaysia
Detalhes do produto
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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R$ 2.615,00
R$ 52,30 Each (In a Tube of 50) (Sem VAT)
50
R$ 2.615,00
R$ 52,30 Each (In a Tube of 50) (Sem VAT)
50
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
| Quantidade | Preço unitário | Per Tubo |
|---|---|---|
| 50 - 50 | R$ 52,30 | R$ 2.615,00 |
| 100 - 200 | R$ 43,55 | R$ 2.177,50 |
| 250+ | R$ 41,53 | R$ 2.076,50 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificações
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
60 V
Series
SIPMOS®
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
340 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10.36mm
Typical Gate Charge @ Vgs
115 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
4.57mm
Transistor Material
Si
Forward Diode Voltage
1.6V
Height
15.95mm
Minimum Operating Temperature
-55 °C
País de Origem
Malaysia
Detalhes do produto
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products