International Rectifier N-Channel MOSFET, 4.2 A, 20 V, 3-Pin SOT-23 IRLML2502TRPBF

Nº de Estoque RS: 162-3274Marca: International RectifierPart Number: IRLML2502TRPBF
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

4.2 A

Maximum Drain Source Voltage

20 V

Series

IRLML2502

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Number of Elements per Chip

1

Width

1.4mm

Length

3.04mm

Typical Gate Charge @ Vgs

8 nC @ 5 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.02mm

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Informações de estoque temporariamente indisponíveis.

R$ 5.400,00

R$ 1,80 Each (On a Reel of 3000) (Sem VAT)

International Rectifier N-Channel MOSFET, 4.2 A, 20 V, 3-Pin SOT-23 IRLML2502TRPBF

R$ 5.400,00

R$ 1,80 Each (On a Reel of 3000) (Sem VAT)

International Rectifier N-Channel MOSFET, 4.2 A, 20 V, 3-Pin SOT-23 IRLML2502TRPBF
Informações de estoque temporariamente indisponíveis.

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

QuantidadePreço unitárioPer Bobina
3000 - 3000R$ 1,80R$ 5.400,00
6000 - 6000R$ 1,72R$ 5.160,00
9000+R$ 1,66R$ 4.980,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

4.2 A

Maximum Drain Source Voltage

20 V

Series

IRLML2502

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Number of Elements per Chip

1

Width

1.4mm

Length

3.04mm

Typical Gate Charge @ Vgs

8 nC @ 5 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.02mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more