IXYS HiperFET, Q-Class N-Channel MOSFET, 48 A, 600 V, 3-Pin TO-264 IXFK48N60Q3
Documentos Técnicos
Especificações
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
48 A
Maximum Drain Source Voltage
600 V
Series
HiperFET, Q-Class
Package Type
TO-264
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
6.5V
Maximum Power Dissipation
1 kW
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.13mm
Transistor Material
Si
Number of Elements per Chip
1
Length
19.96mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
26.16mm
Minimum Operating Temperature
-55 °C
País de Origem
United States
Detalhes do produto
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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R$ 7.778,50
R$ 311,14 Each (In a Tube of 25) (Sem VAT)
25
R$ 7.778,50
R$ 311,14 Each (In a Tube of 25) (Sem VAT)
25
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Verifique novamente mais tarde.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificações
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
48 A
Maximum Drain Source Voltage
600 V
Series
HiperFET, Q-Class
Package Type
TO-264
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
6.5V
Maximum Power Dissipation
1 kW
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.13mm
Transistor Material
Si
Number of Elements per Chip
1
Length
19.96mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
26.16mm
Minimum Operating Temperature
-55 °C
País de Origem
United States
Detalhes do produto
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products