onsemi N-Channel MOSFET, 33 A, 250 V, 3-Pin TO-220AB FDP33N25
Documentos Técnicos
Especificações
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
33 A
Maximum Drain Source Voltage
250 V
Package Type
TO-220AB
Series
UniFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
94 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
235 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.67mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
36.8 nC @ 10 V
Height
9.4mm
Minimum Operating Temperature
-55 °C
Detalhes do produto
UniFET™ N-Channel MOSFET, Fairchild Semiconductor
UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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P.O.A.
Each (Supplied in a Tube) (Sem VAT)
Embalagem de Produção (Tubo)
5
P.O.A.
Each (Supplied in a Tube) (Sem VAT)
Embalagem de Produção (Tubo)
5
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Ideate. Create. Collaborate
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Documentos Técnicos
Especificações
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
33 A
Maximum Drain Source Voltage
250 V
Package Type
TO-220AB
Series
UniFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
94 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
235 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.67mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
36.8 nC @ 10 V
Height
9.4mm
Minimum Operating Temperature
-55 °C
Detalhes do produto
UniFET™ N-Channel MOSFET, Fairchild Semiconductor
UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products