Documentos Técnicos
Especificações
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
240 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Number of Elements per Chip
1
Width
4.82mm
Length
15.87mm
Typical Gate Charge @ Vgs
58 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
20.82mm
País de Origem
China
R$ 230,18
R$ 115,09 Each (In a Pack of 2) (Sem VAT)
Padrão
2
R$ 230,18
R$ 115,09 Each (In a Pack of 2) (Sem VAT)
Padrão
2
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
Quantidade | Preço unitário | Per Pacote |
---|---|---|
2 - 18 | R$ 115,09 | R$ 230,18 |
20+ | R$ 100,72 | R$ 201,44 |
Documentos Técnicos
Especificações
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
240 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Number of Elements per Chip
1
Width
4.82mm
Length
15.87mm
Typical Gate Charge @ Vgs
58 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
20.82mm
País de Origem
China