STMicroelectronics N-Channel MOSFET, 5.8 A, 900 V, 3-Pin TO-220FP STP6NK90ZFP

Nº de Estoque RS: 103-1575Marca: STMicroelectronicsPart Number: STP6NK90ZFP
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

5.8 A

Maximum Drain Source Voltage

900 V

Series

MDmesh, SuperMESH

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

46.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

9.3mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Informações de estoque temporariamente indisponíveis.

R$ 2.244,00

R$ 44,88 Each (In a Tube of 50) (Sem VAT)

STMicroelectronics N-Channel MOSFET, 5.8 A, 900 V, 3-Pin TO-220FP STP6NK90ZFP

R$ 2.244,00

R$ 44,88 Each (In a Tube of 50) (Sem VAT)

STMicroelectronics N-Channel MOSFET, 5.8 A, 900 V, 3-Pin TO-220FP STP6NK90ZFP
Informações de estoque temporariamente indisponíveis.

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

5.8 A

Maximum Drain Source Voltage

900 V

Series

MDmesh, SuperMESH

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

46.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

9.3mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more