Texas Instruments NexFET N-Channel MOSFET, 157 A, 80 V, 8-Pin VSON-CLIP CSD19502Q5BT

Nº de Estoque RS: 133-0154Marca: Texas InstrumentsPart Number: CSD19502Q5BT
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

157 A

Maximum Drain Source Voltage

80 V

Series

NexFET

Package Type

VSON-CLIP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.3V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

195 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.1mm

Number of Elements per Chip

1

Length

6.1mm

Typical Gate Charge @ Vgs

130 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Detalhes do produto

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Informações de estoque temporariamente indisponíveis.

R$ 84,22

R$ 42,11 Each (In a Pack of 2) (Sem VAT)

Texas Instruments NexFET N-Channel MOSFET, 157 A, 80 V, 8-Pin VSON-CLIP CSD19502Q5BT
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R$ 84,22

R$ 42,11 Each (In a Pack of 2) (Sem VAT)

Texas Instruments NexFET N-Channel MOSFET, 157 A, 80 V, 8-Pin VSON-CLIP CSD19502Q5BT
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

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QuantidadePreço unitárioPer Pacote
2 - 8R$ 42,11R$ 84,22
10 - 18R$ 40,67R$ 81,34
20 - 48R$ 36,94R$ 73,88
50 - 98R$ 34,04R$ 68,08
100+R$ 32,95R$ 65,90

Ideate. Create. Collaborate

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No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

157 A

Maximum Drain Source Voltage

80 V

Series

NexFET

Package Type

VSON-CLIP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.3V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

195 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.1mm

Number of Elements per Chip

1

Length

6.1mm

Typical Gate Charge @ Vgs

130 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Detalhes do produto

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more