Texas Instruments NexFET N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 CSD19534KCS

Nº de Estoque RS: 900-9964Marca: Texas InstrumentsPart Number: CSD19534KCS
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

100 V

Series

NexFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

118 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

10.67mm

Typical Gate Charge @ Vgs

17.1 nC @ 0 V

Maximum Operating Temperature

+175 °C

Width

4.7mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

16.51mm

Detalhes do produto

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Informações de estoque temporariamente indisponíveis.

R$ 145,85

R$ 29,17 Each (In a Pack of 5) (Sem VAT)

Texas Instruments NexFET N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 CSD19534KCS
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R$ 145,85

R$ 29,17 Each (In a Pack of 5) (Sem VAT)

Texas Instruments NexFET N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 CSD19534KCS
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

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QuantidadePreço unitárioPer Pacote
5 - 20R$ 29,17R$ 145,85
25 - 45R$ 22,91R$ 114,55
50+R$ 22,80R$ 114,00

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

100 V

Series

NexFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

118 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

10.67mm

Typical Gate Charge @ Vgs

17.1 nC @ 0 V

Maximum Operating Temperature

+175 °C

Width

4.7mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

16.51mm

Detalhes do produto

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more