Toshiba DTMOSIV N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS TK10A60W,S4VX(M

Nº de Estoque RS: 125-0532Marca: ToshibaPart Number: TK10A60W,S4VX(MDistrelec Article No.: 30424218
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Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

9.7 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220SIS

Series

DTMOSIV

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

30 W

Maximum Gate Source Voltage

-30 V, +30 V

Length

10mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

4.5mm

Forward Diode Voltage

1.7V

Height

15mm

País de Origem

Japan

Detalhes do produto

MOSFET Transistors, Toshiba

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Informações de estoque temporariamente indisponíveis.

R$ 107,30

R$ 21,46 Each (In a Pack of 5) (Sem VAT)

Toshiba DTMOSIV N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS TK10A60W,S4VX(M

5

Disponível em múltiplos de 5
5R$ 107,30
10R$ 214,60
15R$ 321,90
20R$ 429,20
25R$ 354,00
30R$ 424,80
35R$ 495,60
40R$ 566,40
45R$ 637,20
50R$ 698,50
55R$ 768,35
60R$ 838,20
65R$ 908,05
70R$ 977,90
75R$ 1.047,75

R$ 107,30

R$ 21,46 Each (In a Pack of 5) (Sem VAT)

Toshiba DTMOSIV N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS TK10A60W,S4VX(M
Informações de estoque temporariamente indisponíveis.

5

Disponível em múltiplos de 5
5R$ 107,30
10R$ 214,60
15R$ 321,90
20R$ 429,20
25R$ 354,00
30R$ 424,80
35R$ 495,60
40R$ 566,40
45R$ 637,20
50R$ 698,50
55R$ 768,35
60R$ 838,20
65R$ 908,05
70R$ 977,90
75R$ 1.047,75

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

QuantidadePreço unitárioPer Pacote
5 - 20R$ 21,46R$ 107,30
25 - 45R$ 14,16R$ 70,80
50 - 120R$ 13,97R$ 69,85
125 - 245R$ 13,84R$ 69,20
250+R$ 13,64R$ 68,20

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

9.7 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220SIS

Series

DTMOSIV

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

30 W

Maximum Gate Source Voltage

-30 V, +30 V

Length

10mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

4.5mm

Forward Diode Voltage

1.7V

Height

15mm

País de Origem

Japan

Detalhes do produto

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more