Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
250 V
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Number of Elements per Chip
1
Width
4.5mm
Length
10mm
Typical Gate Charge @ Vgs
55 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.7V
Height
15mm
País de Origem
Japan
Detalhes do produto
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
R$ 122,90
R$ 12,29 Each (In a Pack of 10) (Sem VAT)
10
R$ 122,90
R$ 12,29 Each (In a Pack of 10) (Sem VAT)
10
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
Quantidade | Preço unitário | Per Pacote |
---|---|---|
10 - 20 | R$ 12,29 | R$ 122,90 |
30+ | R$ 11,82 | R$ 118,20 |
Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
250 V
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Number of Elements per Chip
1
Width
4.5mm
Length
10mm
Typical Gate Charge @ Vgs
55 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.7V
Height
15mm
País de Origem
Japan
Detalhes do produto