Toshiba TK N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 TK31E60W,S1VX(S

Nº de Estoque RS: 168-7968Marca: ToshibaPart Number: TK31E60W,S1VX(S
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Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220

Series

TK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

88 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

230 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

10.16mm

Typical Gate Charge @ Vgs

86 nC @ 10 V

Number of Elements per Chip

1

Width

4.45mm

Height

15.1mm

País de Origem

China

Detalhes do produto

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

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Informações de estoque temporariamente indisponíveis.

R$ 3.288,50

R$ 65,77 Each (In a Tube of 50) (Sem VAT)

Toshiba TK N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 TK31E60W,S1VX(S

R$ 3.288,50

R$ 65,77 Each (In a Tube of 50) (Sem VAT)

Toshiba TK N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 TK31E60W,S1VX(S
Informações de estoque temporariamente indisponíveis.

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

QuantidadePreço unitárioPer Tubo
50 - 200R$ 65,77R$ 3.288,50
250 - 450R$ 60,11R$ 3.005,50
500+R$ 55,62R$ 2.781,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220

Series

TK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

88 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

230 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

10.16mm

Typical Gate Charge @ Vgs

86 nC @ 10 V

Number of Elements per Chip

1

Width

4.45mm

Height

15.1mm

País de Origem

China

Detalhes do produto

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more