Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
120 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
13.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
34 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15mm
País de Origem
China
Detalhes do produto
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
R$ 65,95
R$ 13,19 Each (In a Pack of 5) (Sem VAT)
5
R$ 65,95
R$ 13,19 Each (In a Pack of 5) (Sem VAT)
5
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
Quantidade | Preço unitário | Per Pacote |
---|---|---|
5 - 45 | R$ 13,19 | R$ 65,95 |
50 - 95 | R$ 8,69 | R$ 43,45 |
100 - 195 | R$ 8,58 | R$ 42,90 |
200 - 395 | R$ 8,50 | R$ 42,50 |
400+ | R$ 8,36 | R$ 41,80 |
Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
120 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
13.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
34 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15mm
País de Origem
China
Detalhes do produto