Toshiba TK N-Channel MOSFET, 60 A, 120 V, 3-Pin TO-220SIS TK32A12N1,S4X(S

Nº de Estoque RS: 896-2344Marca: ToshibaPart Number: TK32A12N1,S4X(S
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Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

120 V

Series

TK

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

13.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10mm

Typical Gate Charge @ Vgs

34 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15mm

País de Origem

China

Detalhes do produto

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

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Informações de estoque temporariamente indisponíveis.

R$ 65,95

R$ 13,19 Each (In a Pack of 5) (Sem VAT)

Toshiba TK N-Channel MOSFET, 60 A, 120 V, 3-Pin TO-220SIS TK32A12N1,S4X(S

R$ 65,95

R$ 13,19 Each (In a Pack of 5) (Sem VAT)

Toshiba TK N-Channel MOSFET, 60 A, 120 V, 3-Pin TO-220SIS TK32A12N1,S4X(S
Informações de estoque temporariamente indisponíveis.

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

QuantidadePreço unitárioPer Pacote
5 - 45R$ 13,19R$ 65,95
50 - 95R$ 8,69R$ 43,45
100 - 195R$ 8,58R$ 42,90
200 - 395R$ 8,50R$ 42,50
400+R$ 8,36R$ 41,80

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

120 V

Series

TK

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

13.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10mm

Typical Gate Charge @ Vgs

34 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15mm

País de Origem

China

Detalhes do produto

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more