Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
58 A
Maximum Drain Source Voltage
60 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15mm
País de Origem
China
Detalhes do produto
MOSFET Transistors, Toshiba
R$ 69,05
R$ 13,81 Each (In a Pack of 5) (Sem VAT)
5
R$ 69,05
R$ 13,81 Each (In a Pack of 5) (Sem VAT)
5
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
Quantidade | Preço unitário | Per Pacote |
---|---|---|
5 - 45 | R$ 13,81 | R$ 69,05 |
50 - 95 | R$ 11,54 | R$ 57,70 |
100 - 245 | R$ 10,64 | R$ 53,20 |
250 - 495 | R$ 10,60 | R$ 53,00 |
500+ | R$ 10,54 | R$ 52,70 |
Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
58 A
Maximum Drain Source Voltage
60 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15mm
País de Origem
China
Detalhes do produto