Vishay ThunderFET N-Channel MOSFET, 11.3 A, 100 V, 6-Pin PowerPAK SC-70 SIA416DJ-T1-GE3
Documentos Técnicos
Especificações
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
11.3 A
Maximum Drain Source Voltage
100 V
Package Type
PowerPAK SC-70
Series
ThunderFET
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.6V
Maximum Power Dissipation
19 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
2.15mm
Length
2.15mm
Typical Gate Charge @ Vgs
6.5 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
0.75mm
País de Origem
China
Detalhes do produto
N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
R$ 15.450,00
R$ 5,15 Each (On a Reel of 3000) (Sem VAT)
3000
R$ 15.450,00
R$ 5,15 Each (On a Reel of 3000) (Sem VAT)
3000
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificações
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
11.3 A
Maximum Drain Source Voltage
100 V
Package Type
PowerPAK SC-70
Series
ThunderFET
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.6V
Maximum Power Dissipation
19 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
2.15mm
Length
2.15mm
Typical Gate Charge @ Vgs
6.5 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
0.75mm
País de Origem
China
Detalhes do produto
N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products