Vishay TrenchFET P-Channel MOSFET, 23 A, 30 V, 8-Pin PowerPAK 1212-8 SISS27DN-T1-GE3

Nº de Estoque RS: 814-1323PMarca: VishayPart Number: SISS27DN-T1-GE3
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Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

23 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

57 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.3mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.3mm

Typical Gate Charge @ Vgs

92 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

0.78mm

Minimum Operating Temperature

-55 °C

País de Origem

China

Detalhes do produto

P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Each (Supplied on a Reel) (Sem VAT)

Vishay TrenchFET P-Channel MOSFET, 23 A, 30 V, 8-Pin PowerPAK 1212-8 SISS27DN-T1-GE3
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P.O.A.

Each (Supplied on a Reel) (Sem VAT)

Vishay TrenchFET P-Channel MOSFET, 23 A, 30 V, 8-Pin PowerPAK 1212-8 SISS27DN-T1-GE3
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

23 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

57 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.3mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.3mm

Typical Gate Charge @ Vgs

92 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

0.78mm

Minimum Operating Temperature

-55 °C

País de Origem

China

Detalhes do produto

P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more