Documentos Técnicos
Especificações
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
30 A, 30 A, 20 A
Maximum Drain Source Voltage
200 (Channel 3) V, 40 (Channel 1) V, 40 (Channel 2) V
Package Type
Triple Die
Mounting Type
Surface Mount
Pin Count
10
Maximum Drain Source Resistance
0.0135 (Channel 2) Ω, 0.048 (Channel 1) Ω, 0.06 (Channel 3) Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5 (Channel 1) V, 2.5 (Channel 2) V, 3.5 (Channel 3) V
Minimum Gate Threshold Voltage
1.5 (Channel 1) V, 1.5 (Channel 2) V, 2.5 (Channel 3) V
Maximum Power Dissipation
48 W, 48 W, 60 W
Transistor Configuration
Common Drain
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
3
Typical Gate Charge @ Vgs
14 nC @ 100 V (Channel 3), 23 nC @ 20 V (Channel 2), 30.2 nC @ 20 V (Channel 1)
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Automotive Standard
AEC-Q101
País de Origem
China
P.O.A.
Each (Supplied on a Reel) (Sem VAT)
Embalagem de Produção (Bobina)
5
P.O.A.
Each (Supplied on a Reel) (Sem VAT)
Embalagem de Produção (Bobina)
5
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Documentos Técnicos
Especificações
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
30 A, 30 A, 20 A
Maximum Drain Source Voltage
200 (Channel 3) V, 40 (Channel 1) V, 40 (Channel 2) V
Package Type
Triple Die
Mounting Type
Surface Mount
Pin Count
10
Maximum Drain Source Resistance
0.0135 (Channel 2) Ω, 0.048 (Channel 1) Ω, 0.06 (Channel 3) Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5 (Channel 1) V, 2.5 (Channel 2) V, 3.5 (Channel 3) V
Minimum Gate Threshold Voltage
1.5 (Channel 1) V, 1.5 (Channel 2) V, 2.5 (Channel 3) V
Maximum Power Dissipation
48 W, 48 W, 60 W
Transistor Configuration
Common Drain
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
3
Typical Gate Charge @ Vgs
14 nC @ 100 V (Channel 3), 23 nC @ 20 V (Channel 2), 30.2 nC @ 20 V (Channel 1)
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Automotive Standard
AEC-Q101
País de Origem
China