Infineon SIPMOS® N-Channel MOSFET, 350 mA, 240 V Depletion, 3-Pin SOT-223 BSP129H6327XTSA1

Nº de Estoque RS: 753-2800Marca: InfineonPart Number: BSP129H6327XTSA1
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Especificações

Channel Type

N

Maximum Continuous Drain Current

350 mA

Maximum Drain Source Voltage

240 V

Package Type

SOT-223

Series

SIPMOS®

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

20 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.5mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

3.8 nC @ 5 V

Height

1.6mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

Infineon SIPMOS® N-Channel MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Informações de estoque temporariamente indisponíveis.

R$ 47,10

R$ 9,42 Each (In a Pack of 5) (Sem VAT)

Infineon SIPMOS® N-Channel MOSFET, 350 mA, 240 V Depletion, 3-Pin SOT-223 BSP129H6327XTSA1
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R$ 47,10

R$ 9,42 Each (In a Pack of 5) (Sem VAT)

Infineon SIPMOS® N-Channel MOSFET, 350 mA, 240 V Depletion, 3-Pin SOT-223 BSP129H6327XTSA1
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

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QuantidadePreço unitárioPer Pacote
5 - 45R$ 9,42R$ 47,10
50 - 120R$ 8,56R$ 42,80
125 - 245R$ 8,00R$ 40,00
250 - 495R$ 7,55R$ 37,75
500+R$ 7,19R$ 35,95

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

350 mA

Maximum Drain Source Voltage

240 V

Package Type

SOT-223

Series

SIPMOS®

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

20 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.5mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

3.8 nC @ 5 V

Height

1.6mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

Infineon SIPMOS® N-Channel MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more