STMicroelectronics N-Channel MOSFET, 80 A, 55 V, 3-Pin D2PAK STB80NF55-06T4

Nº de Estoque RS: 188-8527Marca: STMicroelectronicsPart Number: STB80NF55-06T4
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

55 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

9.35mm

Length

10.4mm

Typical Gate Charge @ Vgs

142 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Height

4.37mm

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Informações de estoque temporariamente indisponíveis.

R$ 373,15

R$ 74,63 Each (In a Pack of 5) (Sem VAT)

STMicroelectronics N-Channel MOSFET, 80 A, 55 V, 3-Pin D2PAK STB80NF55-06T4
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R$ 373,15

R$ 74,63 Each (In a Pack of 5) (Sem VAT)

STMicroelectronics N-Channel MOSFET, 80 A, 55 V, 3-Pin D2PAK STB80NF55-06T4
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

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QuantidadePreço unitárioPer Pacote
5 - 20R$ 74,63R$ 373,15
25 - 45R$ 71,17R$ 355,85
50 - 120R$ 68,39R$ 341,95
125 - 245R$ 65,58R$ 327,90
250+R$ 63,46R$ 317,30

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

55 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

9.35mm

Length

10.4mm

Typical Gate Charge @ Vgs

142 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Height

4.37mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more