STMicroelectronics MDmesh DM2 N-Channel MOSFET, 22 A, 650 V, 3-Pin TO-247 STW28N60DM2
Documentos Técnicos
Especificações
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Series
MDmesh DM2
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Length
15.75mm
Typical Gate Charge @ Vgs
39 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
5.15mm
Height
20.15mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
País de Origem
China
Detalhes do produto
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
MOSFET Transistors, STMicroelectronics
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R$ 1.788,60
R$ 59,62 Each (In a Tube of 30) (Sem VAT)
30
R$ 1.788,60
R$ 59,62 Each (In a Tube of 30) (Sem VAT)
30
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
| Quantidade | Preço unitário | Per Tubo |
|---|---|---|
| 30 - 30 | R$ 59,62 | R$ 1.788,60 |
| 60 - 120 | R$ 48,42 | R$ 1.452,60 |
| 150+ | R$ 44,23 | R$ 1.326,90 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificações
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Series
MDmesh DM2
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Length
15.75mm
Typical Gate Charge @ Vgs
39 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
5.15mm
Height
20.15mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
País de Origem
China
Detalhes do produto
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products