Vishay P-Channel MOSFET, 30.3 A, 30 V, 6-Pin PowerPAK SC-70 SiA471DJ-T1-GE3

Nº de Estoque RS: 188-5019Marca: VishayPart Number: SiA471DJ-T1-GE3
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Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

30.3 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK SC-70

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

24 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

19.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +16 V

Number of Elements per Chip

1

Width

2.15mm

Length

2.15mm

Typical Gate Charge @ Vgs

18.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

0.75mm

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Informações de estoque temporariamente indisponíveis.

R$ 202,25

R$ 8,09 Each (In a Pack of 25) (Sem VAT)

Vishay P-Channel MOSFET, 30.3 A, 30 V, 6-Pin PowerPAK SC-70 SiA471DJ-T1-GE3
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R$ 202,25

R$ 8,09 Each (In a Pack of 25) (Sem VAT)

Vishay P-Channel MOSFET, 30.3 A, 30 V, 6-Pin PowerPAK SC-70 SiA471DJ-T1-GE3
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

QuantidadePreço unitárioPer Pacote
25 - 225R$ 8,09R$ 202,25
250 - 600R$ 7,81R$ 195,25
625 - 1225R$ 7,10R$ 177,50
1250 - 2475R$ 5,17R$ 129,25
2500+R$ 4,14R$ 103,50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

30.3 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK SC-70

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

24 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

19.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +16 V

Number of Elements per Chip

1

Width

2.15mm

Length

2.15mm

Typical Gate Charge @ Vgs

18.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

0.75mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more