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Diodes Inc P-Channel MOSFET, 280 mA, 60 V, 3-Pin E-Line ZVP2106A

Nº de Estoque RS: 669-7596Marca: DiodesZetexPart Number: ZVP2106A
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Documentos Técnicos

Especificações

Channel Type

P

Maximum Continuous Drain Current

280 mA

Maximum Drain Source Voltage

60 V

Package Type

E-Line

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

700 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

2.41mm

Transistor Material

Si

Number of Elements per Chip

1

Length

4.77mm

Maximum Operating Temperature

+150 °C

Height

4.01mm

Minimum Operating Temperature

-55 °C

País de Origem

China

Detalhes do produto

P-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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R$ 127,40

R$ 12,74 Each (In a Pack of 10) (Sem VAT)

Diodes Inc P-Channel MOSFET, 280 mA, 60 V, 3-Pin E-Line ZVP2106A
Selecione o tipo de embalagem

R$ 127,40

R$ 12,74 Each (In a Pack of 10) (Sem VAT)

Diodes Inc P-Channel MOSFET, 280 mA, 60 V, 3-Pin E-Line ZVP2106A
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

QuantidadePreço unitárioPer Pacote
10 - 30R$ 12,74R$ 127,40
40 - 190R$ 11,69R$ 116,90
200 - 990R$ 10,57R$ 105,70
1000 - 1990R$ 9,31R$ 93,10
2000+R$ 8,17R$ 81,70

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Você pode estar interessado em

Documentos Técnicos

Especificações

Channel Type

P

Maximum Continuous Drain Current

280 mA

Maximum Drain Source Voltage

60 V

Package Type

E-Line

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

700 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

2.41mm

Transistor Material

Si

Number of Elements per Chip

1

Length

4.77mm

Maximum Operating Temperature

+150 °C

Height

4.01mm

Minimum Operating Temperature

-55 °C

País de Origem

China

Detalhes do produto

P-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
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