ROHM Dual SiC N-Channel SiC Power Module, 300 A, 1200 V, 4-Pin C BSM300D12P2E001

Nº de Estoque RS: 144-2255Marca: ROHMPart Number: BSM300D12P2E001
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Documentos Técnicos

Especificações

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

300 A

Maximum Drain Source Voltage

1200 V

Series

BSM

Package Type

c

Mounting Type

Surface Mount

Pin Count

4

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

1.6V

Maximum Power Dissipation

1875 W

Number of Elements per Chip

2

Width

57.95mm

Length

152mm

Transistor Material

SiC

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-40 °C

Height

17mm

País de Origem

Japan

Detalhes do produto

SiC Power Modules, ROHM

The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

MOSFET Transistors, ROHM Semiconductor

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Informações de estoque temporariamente indisponíveis.

R$ 70.458,48

R$ 17.614,62 Each (In a Tray of 4) (Sem VAT)

ROHM Dual SiC N-Channel SiC Power Module, 300 A, 1200 V, 4-Pin C BSM300D12P2E001

4

Disponível em múltiplos de 4
4R$ 70.458,48
8R$ 140.916,96
12R$ 211.375,44
16R$ 281.833,92
20R$ 352.292,40
24R$ 422.750,88
28R$ 493.209,36
32R$ 563.667,84
36R$ 634.126,32
40R$ 704.584,80
44R$ 775.043,28
48R$ 845.501,76
52R$ 915.960,24
56R$ 986.418,72
60R$ 1.056.877,20

R$ 70.458,48

R$ 17.614,62 Each (In a Tray of 4) (Sem VAT)

ROHM Dual SiC N-Channel SiC Power Module, 300 A, 1200 V, 4-Pin C BSM300D12P2E001
Informações de estoque temporariamente indisponíveis.

4

Disponível em múltiplos de 4
4R$ 70.458,48
8R$ 140.916,96
12R$ 211.375,44
16R$ 281.833,92
20R$ 352.292,40
24R$ 422.750,88
28R$ 493.209,36
32R$ 563.667,84
36R$ 634.126,32
40R$ 704.584,80
44R$ 775.043,28
48R$ 845.501,76
52R$ 915.960,24
56R$ 986.418,72
60R$ 1.056.877,20

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

300 A

Maximum Drain Source Voltage

1200 V

Series

BSM

Package Type

c

Mounting Type

Surface Mount

Pin Count

4

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

1.6V

Maximum Power Dissipation

1875 W

Number of Elements per Chip

2

Width

57.95mm

Length

152mm

Transistor Material

SiC

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-40 °C

Height

17mm

País de Origem

Japan

Detalhes do produto

SiC Power Modules, ROHM

The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

MOSFET Transistors, ROHM Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more