STMicroelectronics FDmesh N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220FP STF11NM60ND

Nº de Estoque RS: 168-7567Marca: STMicroelectronicsPart Number: STF11NM60ND
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220FP

Series

FDmesh

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

450 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Length

10.4mm

Typical Gate Charge @ Vgs

30 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

4.6mm

Height

16.4mm

Detalhes do produto

N-Channel FDmesh™ Power MOSFET, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Informações de estoque temporariamente indisponíveis.

R$ 2.127,00

R$ 42,54 Each (In a Tube of 50) (Sem VAT)

STMicroelectronics FDmesh N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220FP STF11NM60ND

R$ 2.127,00

R$ 42,54 Each (In a Tube of 50) (Sem VAT)

STMicroelectronics FDmesh N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220FP STF11NM60ND
Informações de estoque temporariamente indisponíveis.

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220FP

Series

FDmesh

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

450 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Length

10.4mm

Typical Gate Charge @ Vgs

30 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

4.6mm

Height

16.4mm

Detalhes do produto

N-Channel FDmesh™ Power MOSFET, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more