Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
40 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
390 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Number of Elements per Chip
1
Width
1.8mm
Length
2.9mm
Typical Gate Charge @ Vgs
1.1 nC @ 4.2 V
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.2V
Height
0.7mm
País de Origem
Thailand
R$ 136,00
R$ 2,72 Each (In a Pack of 50) (Sem VAT)
Padrão
50
R$ 136,00
R$ 2,72 Each (In a Pack of 50) (Sem VAT)
Padrão
50
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
Quantidade | Preço unitário | Per Pacote |
---|---|---|
50 - 100 | R$ 2,72 | R$ 136,00 |
150 - 450 | R$ 2,32 | R$ 116,00 |
500 - 950 | R$ 2,04 | R$ 102,00 |
1000+ | R$ 1,74 | R$ 87,00 |
Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
40 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
390 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Number of Elements per Chip
1
Width
1.8mm
Length
2.9mm
Typical Gate Charge @ Vgs
1.1 nC @ 4.2 V
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.2V
Height
0.7mm
País de Origem
Thailand