Toshiba TK N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220SIS TK10A80E,S4X(S

Nº de Estoque RS: 896-2647Marca: ToshibaPart Number: TK10A80E,S4X(S
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Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

800 V

Series

TK

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10mm

Typical Gate Charge @ Vgs

46 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4.5mm

Height

15mm

País de Origem

China

Detalhes do produto

MOSFET Transistors, Toshiba

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Informações de estoque temporariamente indisponíveis.

R$ 109,75

R$ 21,95 Each (In a Pack of 5) (Sem VAT)

Toshiba TK N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220SIS TK10A80E,S4X(S

R$ 109,75

R$ 21,95 Each (In a Pack of 5) (Sem VAT)

Toshiba TK N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220SIS TK10A80E,S4X(S
Informações de estoque temporariamente indisponíveis.

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

QuantidadePreço unitárioPer Pacote
5 - 20R$ 21,95R$ 109,75
25 - 95R$ 19,67R$ 98,35
100 - 245R$ 17,44R$ 87,20
250 - 495R$ 16,58R$ 82,90
500+R$ 15,79R$ 78,95

Ideate. Create. Collaborate

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No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

800 V

Series

TK

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10mm

Typical Gate Charge @ Vgs

46 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4.5mm

Height

15mm

País de Origem

China

Detalhes do produto

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more