Vishay SQ Rugged P-Channel MOSFET, 7.4 A, 40 V, 6-Pin TSOP-6 SQ3419EV-T1_GE3

Nº de Estoque RS: 787-9452PMarca: VishayPart Number: SQ3419EV-T1_GE3
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Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

7.4 A

Maximum Drain Source Voltage

40 V

Package Type

TSOP-6

Series

SQ Rugged

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

78 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

10 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Length

3.1mm

Width

1.7mm

Transistor Material

Si

Number of Elements per Chip

1

Height

1mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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P.O.A.

Each (Supplied on a Reel) (Sem VAT)

Vishay SQ Rugged P-Channel MOSFET, 7.4 A, 40 V, 6-Pin TSOP-6 SQ3419EV-T1_GE3
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P.O.A.

Each (Supplied on a Reel) (Sem VAT)

Vishay SQ Rugged P-Channel MOSFET, 7.4 A, 40 V, 6-Pin TSOP-6 SQ3419EV-T1_GE3

Informações de estoque temporariamente indisponíveis.

Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

7.4 A

Maximum Drain Source Voltage

40 V

Package Type

TSOP-6

Series

SQ Rugged

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

78 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

10 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Length

3.1mm

Width

1.7mm

Transistor Material

Si

Number of Elements per Chip

1

Height

1mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more