Infineon CoolMOS™ P7 N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 IPP60R099P7XKSA1

Nº de Estoque RS: 215-2539Marca: InfineonPart Number: IPP60R099P7XKSA1
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

600 V

Series

CoolMOS™ P7

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.099 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

117 W

Transistor Configuration

Single

Maximum Gate Source Voltage

± 20 V

Width

15.95mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.36mm

Maximum Operating Temperature

+150 °C

Height

4.57mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

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Informações de estoque temporariamente indisponíveis.

R$ 387,20

R$ 77,44 Each (In a Pack of 5) (Sem VAT)

Infineon CoolMOS™ P7 N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 IPP60R099P7XKSA1
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R$ 387,20

R$ 77,44 Each (In a Pack of 5) (Sem VAT)

Infineon CoolMOS™ P7 N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 IPP60R099P7XKSA1
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

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QuantidadePreço unitárioPer Pacote
5 - 20R$ 77,44R$ 387,20
25 - 45R$ 66,05R$ 330,25
50 - 120R$ 63,02R$ 315,10
125 - 245R$ 59,10R$ 295,50
250+R$ 55,88R$ 279,40

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

600 V

Series

CoolMOS™ P7

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.099 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

117 W

Transistor Configuration

Single

Maximum Gate Source Voltage

± 20 V

Width

15.95mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.36mm

Maximum Operating Temperature

+150 °C

Height

4.57mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more