OSI Optoelectronics, UV-035EQ UV Si Photodiode, Through Hole TO-8
Documentos Técnicos
Especificações
Brand
OSI OptoelectronicsSpectrums Detected
Ultraviolet
Spectrum(s) Detected
Ultraviolet
Wavelength of Peak Sensitivity
720nm
Package Type
TO-8
Mounting Type
Through Hole
Amplifier Function
No
Number of Pins
2
Diode Material
Si
Height
5.21mm
Diameter
13.97mm
Peak Photo Sensitivity
0.14A/W
Polarity
Reverse
Detalhes do produto
OSI UV Enhanced Series Photodiodes
The UV Enhanced series, from OSI Optoelectronics, are a range of UV enhanced silicon photodiodes. This series includes two seperate families of photodiodes, inversion channel and planar diffused. Both of these families are designed for low noise detection in the UV region of the electromagnetic spectrum.
The inversion layer structure family exhibit 100% internal quantum efficiency. Offering high shunt resistance, low noise and high breakdown voltages, this family of photodiodes are idea for low intensity light measurements.
Photodiodes with the planar diffused structure offer a lower capacitance and higher response time compared to the inversion later family. They also show linearity of photocurrent up to higher light input power compared to the inversion layer photodiodes.
Suitable applications for the UV Enhanced series includes; pollution monitoring, medical instrumentation, UV exposure meters, spectroscopy, water purification and fluorescence.
Photodiodes, OSI Optoelectronics
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R$ 6.374,10
R$ 1.274,82 Each (In a Tray of 5) (Sem VAT)
5
R$ 6.374,10
R$ 1.274,82 Each (In a Tray of 5) (Sem VAT)
5
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Documentos Técnicos
Especificações
Brand
OSI OptoelectronicsSpectrums Detected
Ultraviolet
Spectrum(s) Detected
Ultraviolet
Wavelength of Peak Sensitivity
720nm
Package Type
TO-8
Mounting Type
Through Hole
Amplifier Function
No
Number of Pins
2
Diode Material
Si
Height
5.21mm
Diameter
13.97mm
Peak Photo Sensitivity
0.14A/W
Polarity
Reverse
Detalhes do produto
OSI UV Enhanced Series Photodiodes
The UV Enhanced series, from OSI Optoelectronics, are a range of UV enhanced silicon photodiodes. This series includes two seperate families of photodiodes, inversion channel and planar diffused. Both of these families are designed for low noise detection in the UV region of the electromagnetic spectrum.
The inversion layer structure family exhibit 100% internal quantum efficiency. Offering high shunt resistance, low noise and high breakdown voltages, this family of photodiodes are idea for low intensity light measurements.
Photodiodes with the planar diffused structure offer a lower capacitance and higher response time compared to the inversion later family. They also show linearity of photocurrent up to higher light input power compared to the inversion layer photodiodes.
Suitable applications for the UV Enhanced series includes; pollution monitoring, medical instrumentation, UV exposure meters, spectroscopy, water purification and fluorescence.
Photodiodes, OSI Optoelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products