Documentos Técnicos
Especificações
Brand
ROHMChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
30 V
Series
RRR040P03
Package Type
TSMT-3
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
72 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.9mm
Typical Gate Charge @ Vgs
10.5 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
0.85mm
Forward Diode Voltage
1.2V
Detalhes do produto
P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
P.O.A.
Each (Supplied on a Reel) (Sem VAT)
Embalagem de Produção (Bobina)
20
P.O.A.
Each (Supplied on a Reel) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Embalagem de Produção (Bobina)
20
Informações de estoque temporariamente indisponíveis.
Documentos Técnicos
Especificações
Brand
ROHMChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
30 V
Series
RRR040P03
Package Type
TSMT-3
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
72 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.9mm
Typical Gate Charge @ Vgs
10.5 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
0.85mm
Forward Diode Voltage
1.2V
Detalhes do produto