STMicroelectronics STripFET II N-Channel MOSFET, 60 A, 60 V, 3-Pin D2PAK STB60NF06LT4

Nº de Estoque RS: 795-6944Marca: STMicroelectronicsPart Number: STB60NF06LT4
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Especificações

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

60 V

Series

STripFET II

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +15 V

Width

9.35mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

35 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Height

4.6mm

Minimum Operating Temperature

-65 °C

Detalhes do produto

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Informações de estoque temporariamente indisponíveis.

R$ 194,75

R$ 38,95 Each (In a Pack of 5) (Sem VAT)

STMicroelectronics STripFET II N-Channel MOSFET, 60 A, 60 V, 3-Pin D2PAK STB60NF06LT4
Selecione o tipo de embalagem

R$ 194,75

R$ 38,95 Each (In a Pack of 5) (Sem VAT)

STMicroelectronics STripFET II N-Channel MOSFET, 60 A, 60 V, 3-Pin D2PAK STB60NF06LT4
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

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QuantidadePreço unitárioPer Pacote
5 - 20R$ 38,95R$ 194,75
25 - 45R$ 37,56R$ 187,80
50 - 120R$ 34,28R$ 171,40
125 - 245R$ 31,30R$ 156,50
250+R$ 30,20R$ 151,00

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

60 V

Series

STripFET II

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +15 V

Width

9.35mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

35 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Height

4.6mm

Minimum Operating Temperature

-65 °C

Detalhes do produto

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more