Toshiba TK N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-247 TK39N60W,S1VF(S

Nº de Estoque RS: 896-2372Marca: ToshibaPart Number: TK39N60W,S1VF(S
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Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

39 A

Maximum Drain Source Voltage

600 V

Series

TK

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

270 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Length

15.94mm

Typical Gate Charge @ Vgs

110 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

5.02mm

Transistor Material

Si

Height

20.95mm

País de Origem

China

Detalhes do produto

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

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Informações de estoque temporariamente indisponíveis.

R$ 99,58

R$ 99,58 Each (Sem VAT)

Toshiba TK N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-247 TK39N60W,S1VF(S

R$ 99,58

R$ 99,58 Each (Sem VAT)

Toshiba TK N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-247 TK39N60W,S1VF(S
Informações de estoque temporariamente indisponíveis.

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

QuantidadePreço unitário
1 - 9R$ 99,58
10 - 49R$ 83,42
50 - 99R$ 77,24
100 - 199R$ 76,45
200+R$ 75,90

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

39 A

Maximum Drain Source Voltage

600 V

Series

TK

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

270 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Length

15.94mm

Typical Gate Charge @ Vgs

110 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

5.02mm

Transistor Material

Si

Height

20.95mm

País de Origem

China

Detalhes do produto

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more