Vishay Siliconix N-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 SQ2364EES-T1_GE3
Documentos Técnicos
Especificações
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
60 V
Series
TrenchFET
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.46V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
2 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Height
1.02mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
País de Origem
China
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R$ 17.400,00
R$ 5,80 Each (On a Reel of 3000) (Sem VAT)
3000
R$ 17.400,00
R$ 5,80 Each (On a Reel of 3000) (Sem VAT)
3000
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Ideate. Create. Collaborate
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Documentos Técnicos
Especificações
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
60 V
Series
TrenchFET
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.46V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
2 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Height
1.02mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
País de Origem
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products