Documentos Técnicos
Especificações
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
PowerPAK SO-8L
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
66 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
5mm
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Length
5.99mm
Typical Gate Charge @ Vgs
66 nC @ 10 V
Height
1.07mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
País de Origem
China
R$ 38.670,00
R$ 12,89 Each (On a Reel of 3000) (Sem VAT)
3000
R$ 38.670,00
R$ 12,89 Each (On a Reel of 3000) (Sem VAT)
3000
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
Documentos Técnicos
Especificações
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
PowerPAK SO-8L
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
66 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
5mm
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Length
5.99mm
Typical Gate Charge @ Vgs
66 nC @ 10 V
Height
1.07mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
País de Origem
China