Vishay N-Channel MOSFET, 4.1 A, 800 V, 3-Pin TO-220AB IRFBE30PBF

Nº de Estoque RS: 541-1124Marca: VishayPart Number: IRFBE30PBFDistrelec Article No.: 17115208
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Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

4.1 A

Maximum Drain Source Voltage

800 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

78 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Height

9.01mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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N-channel MOSFET,IRFBE30 4.1A 800V
P.O.A.Each (Sem VAT)
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R$ 44,47

R$ 44,47 Each (Sem VAT)

Vishay N-Channel MOSFET, 4.1 A, 800 V, 3-Pin TO-220AB IRFBE30PBF
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R$ 44,47

R$ 44,47 Each (Sem VAT)

Vishay N-Channel MOSFET, 4.1 A, 800 V, 3-Pin TO-220AB IRFBE30PBF
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

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QuantidadePreço unitário
1 - 9R$ 44,47
10 - 49R$ 43,93
50 - 99R$ 42,65
100 - 249R$ 40,78
250+R$ 39,36

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Você pode estar interessado em
N-channel MOSFET,IRFBE30 4.1A 800V
P.O.A.Each (Sem VAT)

Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

4.1 A

Maximum Drain Source Voltage

800 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

78 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Height

9.01mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Você pode estar interessado em
N-channel MOSFET,IRFBE30 4.1A 800V
P.O.A.Each (Sem VAT)