Vishay N-Channel MOSFET, 20 A, 40 V, 8-Pin SOIC SI4124DY-T1-GE3

Nº de Estoque RS: 812-3195Marca: VishayPart Number: SI4124DY-T1-GE3
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Especificações

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

40 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

5.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

5mm

Transistor Material

Si

Width

4mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

51 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.55mm

País de Origem

China

Detalhes do produto

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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R$ 250,80

R$ 25,08 Each (In a Pack of 10) (Sem VAT)

Vishay N-Channel MOSFET, 20 A, 40 V, 8-Pin SOIC SI4124DY-T1-GE3
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R$ 250,80

R$ 25,08 Each (In a Pack of 10) (Sem VAT)

Vishay N-Channel MOSFET, 20 A, 40 V, 8-Pin SOIC SI4124DY-T1-GE3
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

QuantidadePreço unitárioPer Pacote
10 - 40R$ 25,08R$ 250,80
50 - 90R$ 23,92R$ 239,20
100 - 240R$ 22,01R$ 220,10
250 - 490R$ 21,00R$ 210,00
500+R$ 19,99R$ 199,90

Ideate. Create. Collaborate

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No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
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Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

40 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

5.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

5mm

Transistor Material

Si

Width

4mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

51 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.55mm

País de Origem

China

Detalhes do produto

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
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