Documentos Técnicos
Especificações
Memory Size
2Mbit
Organisation
128K x 16 bit
Number of Words
128K
Number of Bits per Word
16bit
Maximum Random Access Time
45ns
Address Bus Width
16bit
Clock Frequency
1MHz
Low Power
Yes
Mounting Type
Surface Mount
Package Type
TSOP
Pin Count
44
Dimensions
18.51 x 10.26 x 1.04mm
Height
1.04mm
Maximum Operating Supply Voltage
3.6 V
Width
10.26mm
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2.2 V
Maximum Operating Temperature
+85 °C
Length
18.51mm
Detalhes do produto
Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor
The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.
SRAM (Static Random Access Memory)
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P.O.A.
2
P.O.A.
2
Documentos Técnicos
Especificações
Memory Size
2Mbit
Organisation
128K x 16 bit
Number of Words
128K
Number of Bits per Word
16bit
Maximum Random Access Time
45ns
Address Bus Width
16bit
Clock Frequency
1MHz
Low Power
Yes
Mounting Type
Surface Mount
Package Type
TSOP
Pin Count
44
Dimensions
18.51 x 10.26 x 1.04mm
Height
1.04mm
Maximum Operating Supply Voltage
3.6 V
Width
10.26mm
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2.2 V
Maximum Operating Temperature
+85 °C
Length
18.51mm
Detalhes do produto
Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor
The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.