N-Channel MOSFET, 660 mA, 200 V, 3-Pin SOT-223 Infineon BSP297H6327XTSA1
Documentos Técnicos
Especificações
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
660 mA
Maximum Drain Source Voltage
200 V
Package Type
SOT-223
Series
SIPMOS
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
6.5mm
Transistor Material
Si
Typical Gate Charge @ Vgs
12.9 nC @ 10 V
Width
3.5mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
1.6mm
País de Origem
China
Detalhes do produto
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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R$ 5,75
Each (On a Reel of 1000) (Sem VAT)
1000
R$ 5,75
Each (On a Reel of 1000) (Sem VAT)
1000
Comprar em grandes quantidades
| Quantidade | Preço unitário | Per Bobina |
|---|---|---|
| 1000 - 1000 | R$ 5,75 | R$ 5.750,00 |
| 2000 - 2000 | R$ 5,53 | R$ 5.530,00 |
| 3000+ | R$ 5,26 | R$ 5.260,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificações
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
660 mA
Maximum Drain Source Voltage
200 V
Package Type
SOT-223
Series
SIPMOS
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
6.5mm
Transistor Material
Si
Typical Gate Charge @ Vgs
12.9 nC @ 10 V
Width
3.5mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
1.6mm
País de Origem
China
Detalhes do produto
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products