Infineon 650V 16A, SiC Schottky Diode, 2-Pin TO-220 IDH16G65C5

Nº de Estoque RS: 168-8952Marca: InfineonPart Number: IDH16G65C5
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Documentos Técnicos

Especificações

Brand

Infineon

Mounting Type

Through Hole

Package Type

TO-220

Maximum Continuous Forward Current

16A

Peak Reverse Repetitive Voltage

650V

Diode Configuration

Single

Diode Type

SiC Schottky

Pin Count

2

Maximum Forward Voltage Drop

2.1V

Number of Elements per Chip

1

Diode Technology

SiC Schottky

Peak Non-Repetitive Forward Surge Current

124A

País de Origem

Malaysia

Detalhes do produto

thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon

The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.

Diodes and Rectifiers, Infineon

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P.O.A.

Infineon 650V 16A, SiC Schottky Diode, 2-Pin TO-220 IDH16G65C5

50

Disponível em múltiplos de 1
50P.O.A.
100P.O.A.
150P.O.A.
200P.O.A.
250P.O.A.
300P.O.A.
350P.O.A.
400P.O.A.
450P.O.A.
500P.O.A.
550P.O.A.
600P.O.A.
650P.O.A.
700P.O.A.
750P.O.A.

P.O.A.

Infineon 650V 16A, SiC Schottky Diode, 2-Pin TO-220 IDH16G65C5
Informações de estoque temporariamente indisponíveis.

50

Disponível em múltiplos de 1
50P.O.A.
100P.O.A.
150P.O.A.
200P.O.A.
250P.O.A.
300P.O.A.
350P.O.A.
400P.O.A.
450P.O.A.
500P.O.A.
550P.O.A.
600P.O.A.
650P.O.A.
700P.O.A.
750P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Infineon

Mounting Type

Through Hole

Package Type

TO-220

Maximum Continuous Forward Current

16A

Peak Reverse Repetitive Voltage

650V

Diode Configuration

Single

Diode Type

SiC Schottky

Pin Count

2

Maximum Forward Voltage Drop

2.1V

Number of Elements per Chip

1

Diode Technology

SiC Schottky

Peak Non-Repetitive Forward Surge Current

124A

País de Origem

Malaysia

Detalhes do produto

thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon

The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.

Diodes and Rectifiers, Infineon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more