N-Channel MOSFET, 10.3 A, 600 V, 3-Pin TO-220 FP Infineon IPAW60R600CEXKSA1
Documentos Técnicos
Especificações
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
10.3 A
Maximum Drain Source Voltage
600 V
Series
CoolMOS™ CE
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
28 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.9mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
11.3mm
Typical Gate Charge @ Vgs
20.5 nC @ 10 V
Height
16.27mm
Minimum Operating Temperature
-40 °C
Forward Diode Voltage
0.9V
País de Origem
China
Detalhes do produto
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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R$ 26,42
Each (In a Pack of 5) (Sem VAT)
Padrão
5
R$ 26,42
Each (In a Pack of 5) (Sem VAT)
Padrão
5
Comprar em grandes quantidades
| Quantidade | Preço unitário | Per Pacote |
|---|---|---|
| 5 - 45 | R$ 26,42 | R$ 132,10 |
| 50 - 120 | R$ 23,86 | R$ 119,30 |
| 125 - 245 | R$ 22,55 | R$ 112,75 |
| 250 - 495 | R$ 21,30 | R$ 106,50 |
| 500+ | R$ 20,18 | R$ 100,90 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificações
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
10.3 A
Maximum Drain Source Voltage
600 V
Series
CoolMOS™ CE
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
28 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.9mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
11.3mm
Typical Gate Charge @ Vgs
20.5 nC @ 10 V
Height
16.27mm
Minimum Operating Temperature
-40 °C
Forward Diode Voltage
0.9V
País de Origem
China
Detalhes do produto
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products