N-Channel MOSFET, 33 A, 100 V, 3-Pin TO-220AB Infineon IRF540NPBF

Nº de Estoque RS: 914-8154Marca: InfineonPart Number: IRF540NPBFIMPA: 0
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Documentos Técnicos

Especificações

Number of Elements per Chip

1

Channel Mode

Enhancement

Channel Type

N

Transistor Material

Si

Pin Count

3

Minimum Operating Temperature

-55 °C

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Configuration

Single

Mounting Type

Through Hole

Minimum Gate Threshold Voltage

2V

Maximum Operating Temperature

+175 °C

Maximum Drain Source Voltage

100 V

Maximum Gate Threshold Voltage

4V

Series

HEXFET

Width

4.69mm

Package Type

TO-220AB

Length

10.54mm

Height

8.77mm

Maximum Power Dissipation

130 W

Maximum Continuous Drain Current

33 A

Maximum Drain Source Resistance

44 mΩ

Typical Gate Charge @ Vgs

71 nC @ 10 V

País de Origem

China

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R$ 14,38

Each (In a Pack of 20) (Sem VAT)

N-Channel MOSFET, 33 A, 100 V, 3-Pin TO-220AB Infineon IRF540NPBF
Selecione o tipo de embalagem

R$ 14,38

Each (In a Pack of 20) (Sem VAT)

N-Channel MOSFET, 33 A, 100 V, 3-Pin TO-220AB Infineon IRF540NPBF
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Comprar em grandes quantidades

QuantidadePreço unitárioPer Pacote
20 - 80R$ 14,38R$ 287,60
100 - 180R$ 11,39R$ 227,80
200 - 480R$ 10,84R$ 216,80
500 - 980R$ 10,21R$ 204,20
1000+R$ 9,61R$ 192,20

Ideate. Create. Collaborate

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No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Number of Elements per Chip

1

Channel Mode

Enhancement

Channel Type

N

Transistor Material

Si

Pin Count

3

Minimum Operating Temperature

-55 °C

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Configuration

Single

Mounting Type

Through Hole

Minimum Gate Threshold Voltage

2V

Maximum Operating Temperature

+175 °C

Maximum Drain Source Voltage

100 V

Maximum Gate Threshold Voltage

4V

Series

HEXFET

Width

4.69mm

Package Type

TO-220AB

Length

10.54mm

Height

8.77mm

Maximum Power Dissipation

130 W

Maximum Continuous Drain Current

33 A

Maximum Drain Source Resistance

44 mΩ

Typical Gate Charge @ Vgs

71 nC @ 10 V

País de Origem

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more