Documentos Técnicos
Especificações
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
N
Transistor Material
Si
Pin Count
3
Minimum Operating Temperature
-55 °C
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Configuration
Single
Mounting Type
Through Hole
Minimum Gate Threshold Voltage
2V
Maximum Operating Temperature
+175 °C
Maximum Drain Source Voltage
100 V
Maximum Gate Threshold Voltage
4V
Series
HEXFET
Width
4.69mm
Package Type
TO-220AB
Length
10.54mm
Height
8.77mm
Maximum Power Dissipation
130 W
Maximum Continuous Drain Current
33 A
Brand
InfineonMaximum Drain Source Resistance
44 mΩ
Typical Gate Charge @ Vgs
71 nC @ 10 V
País de Origem
China
Informações de estoque temporariamente indisponíveis.
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R$ 14,38
Each (In a Pack of 20) (Sem VAT)
Padrão
20
R$ 14,38
Each (In a Pack of 20) (Sem VAT)
Padrão
20
Comprar em grandes quantidades
Quantidade | Preço unitário | Per Pacote |
---|---|---|
20 - 80 | R$ 14,38 | R$ 287,60 |
100 - 180 | R$ 11,39 | R$ 227,80 |
200 - 480 | R$ 10,84 | R$ 216,80 |
500 - 980 | R$ 10,21 | R$ 204,20 |
1000+ | R$ 9,61 | R$ 192,20 |
Documentos Técnicos
Especificações
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
N
Transistor Material
Si
Pin Count
3
Minimum Operating Temperature
-55 °C
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Configuration
Single
Mounting Type
Through Hole
Minimum Gate Threshold Voltage
2V
Maximum Operating Temperature
+175 °C
Maximum Drain Source Voltage
100 V
Maximum Gate Threshold Voltage
4V
Series
HEXFET
Width
4.69mm
Package Type
TO-220AB
Length
10.54mm
Height
8.77mm
Maximum Power Dissipation
130 W
Maximum Continuous Drain Current
33 A
Brand
InfineonMaximum Drain Source Resistance
44 mΩ
Typical Gate Charge @ Vgs
71 nC @ 10 V
País de Origem
China