Documentos Técnicos
Especificações
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
78 A
Maximum Drain Source Voltage
100 V
Package Type
PQFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
5.85mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
26 @ 10 V nC
Height
1.05mm
Series
PowerTrench
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Detalhes do produto
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
P.O.A.
3000
P.O.A.
3000
Documentos Técnicos
Especificações
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
78 A
Maximum Drain Source Voltage
100 V
Package Type
PQFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
5.85mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
26 @ 10 V nC
Height
1.05mm
Series
PowerTrench
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Detalhes do produto