Documentos Técnicos
Especificações
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
8 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
5 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
100
Maximum Base Emitter Saturation Voltage
4.5 V
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Saturation Voltage
2 V
Maximum Collector Cut-off Current
20µA
Maximum Power Dissipation
75 W
Minimum Operating Temperature
-65 °C
Maximum Operating Temperature
+150 °C
Length
15.75mm
Height
4.82mm
Width
10.28mm
Dimensions
15.75 x 10.28 x 4.82mm
Detalhes do produto
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
P.O.A.
Embalagem de Produção (Tubo)
5
P.O.A.
Embalagem de Produção (Tubo)
5
Documentos Técnicos
Especificações
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
8 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
5 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
100
Maximum Base Emitter Saturation Voltage
4.5 V
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Saturation Voltage
2 V
Maximum Collector Cut-off Current
20µA
Maximum Power Dissipation
75 W
Minimum Operating Temperature
-65 °C
Maximum Operating Temperature
+150 °C
Length
15.75mm
Height
4.82mm
Width
10.28mm
Dimensions
15.75 x 10.28 x 4.82mm
Detalhes do produto
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.