Dual N/P-Channel-Channel MOSFET, 460 mA, 680 mA, 25 V, 6-Pin SOT-23 onsemi FDC6321C
Documentos Técnicos
Especificações
Brand
onsemiChannel Type
N, P
Maximum Continuous Drain Current
460 mA, 680 mA
Maximum Drain Source Voltage
25 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1.1 Ω, 450 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
900 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Typical Gate Charge @ Vgs
1.1 nC @ 4.5 V, 1.64 nC @ 4.5 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Detalhes do produto
Digital FETs, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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R$ 10,94
Each (Sem VAT)
Padrão
1
R$ 10,94
Each (Sem VAT)
Padrão
1
Comprar em grandes quantidades
| Quantidade | Preço unitário |
|---|---|
| 1 - 49 | R$ 10,94 |
| 50 - 99 | R$ 9,31 |
| 100 - 249 | R$ 8,96 |
| 250 - 499 | R$ 8,66 |
| 500+ | R$ 8,28 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificações
Brand
onsemiChannel Type
N, P
Maximum Continuous Drain Current
460 mA, 680 mA
Maximum Drain Source Voltage
25 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1.1 Ω, 450 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
900 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Typical Gate Charge @ Vgs
1.1 nC @ 4.5 V, 1.64 nC @ 4.5 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Detalhes do produto
Digital FETs, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products